Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide
Identifieur interne : 005136 ( Main/Repository ); précédent : 005135; suivant : 005137Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide
Auteurs : RBID : Pascal:09-0227890Descripteurs français
- Pascal (Inist)
- Propriété interface, Epitaxie jet moléculaire, Structure MOS, Transistor MOSFET, Semiconducteur III-V, Composé III-V, Electrode commande, Couche monomoléculaire, Couche épaisse, Porte logique, Etat interface, Interface, Arséniate, Transistor effet champ, Arséniure d'indium, Arséniure de gallium, Oxyde d'hafnium, Phosphure d'indium, InGaAs, InAlAs, HfO2, In0.53Ga0.47As, InP, 8115H, 8530T.
English descriptors
- KwdEn :
Abstract
With the goal to demonstrate feasibility of high-mobility buried channel, we used in-situ high-k deposition approach and show for the first time operational MOSFET with buried HfO2/In0.52Al0.48 As/In0.53Ga0.47As/InP channel with mobility 1800 cm2/V-s at 3 × 1012cm-2 and e-mode operation. Interface properties are compared with a similar gate stack with 2 monolayer thick InGaAs "passivation" layer between InAlAs and the oxide. The latter gate stack has shown significantly improved gate control and ON/OFF ratio due to reduction of the interface state density.
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<author><name sortKey="Oktyabrsky, S" uniqKey="Oktyabrsky S">S. Oktyabrsky</name>
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<author><name sortKey="Moore, R" uniqKey="Moore R">R. Moore</name>
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<author><name sortKey="Tsar, W" uniqKey="Tsar W">W. Tsar</name>
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<date when="2009">2009</date>
<idno type="stanalyst">PASCAL 09-0227890 INIST</idno>
<idno type="RBID">Pascal:09-0227890</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenates</term>
<term>Field effect transistors</term>
<term>Gallium arsenides</term>
<term>Gates</term>
<term>Hafnium oxide</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Indium phosphide</term>
<term>Interface properties</term>
<term>Interface states</term>
<term>Interfaces</term>
<term>Logic gates</term>
<term>MOS structure</term>
<term>MOSFET</term>
<term>Molecular beam epitaxy</term>
<term>Monolayers</term>
<term>Thick films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété interface</term>
<term>Epitaxie jet moléculaire</term>
<term>Structure MOS</term>
<term>Transistor MOSFET</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Electrode commande</term>
<term>Couche monomoléculaire</term>
<term>Couche épaisse</term>
<term>Porte logique</term>
<term>Etat interface</term>
<term>Interface</term>
<term>Arséniate</term>
<term>Transistor effet champ</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Oxyde d'hafnium</term>
<term>Phosphure d'indium</term>
<term>InGaAs</term>
<term>InAlAs</term>
<term>HfO2</term>
<term>In0.53Ga0.47As</term>
<term>InP</term>
<term>8115H</term>
<term>8530T</term>
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<front><div type="abstract" xml:lang="en">With the goal to demonstrate feasibility of high-mobility buried channel, we used in-situ high-k deposition approach and show for the first time operational MOSFET with buried HfO<sub>2</sub>
/In<sub>0.52</sub>
Al<sub>0.48</sub>
As/In<sub>0.53</sub>
Ga<sub>0.47</sub>
As/InP channel with mobility 1800 cm<sup>2</sup>
/V-s at 3 × 10<sup>12</sup>
cm<sup>-2</sup>
and e-mode operation. Interface properties are compared with a similar gate stack with 2 monolayer thick InGaAs "passivation" layer between InAlAs and the oxide. The latter gate stack has shown significantly improved gate control and ON/OFF ratio due to reduction of the interface state density.</div>
</front>
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<fC01 i1="01" l="ENG"><s0>With the goal to demonstrate feasibility of high-mobility buried channel, we used in-situ high-k deposition approach and show for the first time operational MOSFET with buried HfO<sub>2</sub>
/In<sub>0.52</sub>
Al<sub>0.48</sub>
As/In<sub>0.53</sub>
Ga<sub>0.47</sub>
As/InP channel with mobility 1800 cm<sup>2</sup>
/V-s at 3 × 10<sup>12</sup>
cm<sup>-2</sup>
and e-mode operation. Interface properties are compared with a similar gate stack with 2 monolayer thick InGaAs "passivation" layer between InAlAs and the oxide. The latter gate stack has shown significantly improved gate control and ON/OFF ratio due to reduction of the interface state density.</s0>
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<fC02 i1="01" i2="3"><s0>001B80A15H</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>03</s5>
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<s5>03</s5>
</fC03>
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<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>MOSFET</s0>
<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>11</s5>
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<s5>14</s5>
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<fC03 i1="15" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Gallium arsenides</s0>
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<s5>16</s5>
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<s4>INC</s4>
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<s4>INC</s4>
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<s4>INC</s4>
<s5>72</s5>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Molecular Beam Epitaxy</s1>
<s2>15</s2>
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<s4>2008-08-03</s4>
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